类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM6L35FE,LM | Toshiba Semiconductor and Storage | 数据表 | 300 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 180mA 100mA | 150°C TJ | Tape & Reel (TR) | 2009 | 活跃 | 1 (Unlimited) | 150mW | unknown | SSM6L35 | N and P-Channel | 3 Ω @ 50mA, 4V | 1V @ 1mA | 9.5pF @ 3V | 20V | 100mA | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110900PAL | Advanced Linear Devices Inc. | 数据表 | 81 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | Dual | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | 500Ohm @ 4V | 20mV @ 1μA | 2.5pF @ 5V | 10.6V | 12mA | 10.6V | 10V | 2.5pF | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC25D1UVT-13 | Diodes Incorporated | 数据表 | 33000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 500mA 3.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.3W | 未说明 | 未说明 | N and P-Channel | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 27.6pF @ 10V | 0.9nC @ 10V | 25V 12V | 3.9A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON7812 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerSMD, Flat Leads | 8-DFN-EP (3x3) | 6A | -55°C~150°C TJ | Bulk | 2011 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 4.1W | 4.1W | 2 N-Channel (Dual) Asymmetrical | 14.5mOhm @ 6A, 10V | 2.2V @ 250μA | 600pF @ 15V | 15nC @ 10V | 30V | 6A | 600pF | Standard | 14.5 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5483NLT3G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 8 | 37.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin (Sn) | 3.1W | 8 | Dual | 6.8 ns | 2 N-Channel (Dual) | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 无卤素 | 668pF @ 25V | 23.4nC @ 10V | 10.3ns | 60V | 23.5 ns | 6.4A | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
CMXDM7002A TR PBFREE | Central Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 35 Weeks | 表面贴装 | SOT-23-6 | YES | 280mA | -65°C~150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 增强型MOSFET | 350mW | 2 N-Channel (Dual) | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 25V | 0.59nC @ 4.5V | 60V | 0.28A | METAL-OXIDE SEMICONDUCTOR | 0.35W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110914PAL | Advanced Linear Devices Inc. | 数据表 | 43 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | Dual | 500mW | 2 N-Channel (Dual) Matched Pair | 500 Ω @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS3DNE60L | STMicroelectronics | 数据表 | 45000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | 2W | 鸥翼 | 260 | 30 | STS3D | 8 | 增强型MOSFET | 2W | 20 ns | 2 N-Channel (Dual) | SWITCHING | 80m Ω @ 1.5A, 10V | 1V @ 250μA | 815pF @ 25V | 13.5nC @ 4.5V | 30ns | 60V | 16 ns | 3A | 20V | 3A | 0.1Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | UP0187B00L | Panasonic Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-665 | SSMini5-F2 | 100mA | 125°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | 30V | 125mW | 100mA | 125mW | 2 N-Channel (Dual) | 8Ohm @ 10mA, 4V | 1.5V @ 1μA | 12pF @ 3V | 30V | 100mA | 12pF | 逻辑电平门 | 8 Ω | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2415-TL-W-Z | ON Semiconductor | 数据表 | 12 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-SMD, Flat Lead | 3A Ta | 150°C TJ | Tape & Reel (TR) | 活跃 | 2 N-Channel (Dual) | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 505pF @ 20V | 10nC @ 10V | 60V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMNH4026SSDQ-13 | Diodes Incorporated | 数据表 | 2500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.5A Ta | -55°C~175°C TJ | Tape & Reel (TR) | e3 | 活跃 | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 2 N-Channel (Dual) | 24m Ω @ 6A, 10V | 3V @ 250μA | 1060pF @ 20V | 8.8nC @ 4.5V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL306NL6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 8.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 500mW | 鸥翼 | BSL306 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 4.4 ns | 2 N-Channel (Dual) | 57m Ω @ 2.3A, 10V | 2V @ 11μA | 275pF @ 15V | 1.6nC @ 5V | 2.3ns | 30V | 1.4 ns | 2.3A | 20V | 0.057Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 17 pF | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
BSL314PEL6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 2 | 12.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 逻辑电平兼容 | 500mW | 鸥翼 | 6 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5.1 ns | 2 P-Channel (Dual) | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 294pF @ 15V | 2.9nC @ 10V | 3.9ns | 30V | 2.8 ns | 1.5A | 20V | 0.14Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 11 pF | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||
BSL207NL6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMAIBLE | 8541.21.00.95 | 500mW | 鸥翼 | 6 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5.4 ns | 2 N-Channel (Dual) | 70m Ω @ 2.1A, 4.5V | 1.2V @ 11μA | 419pF @ 10V | 2.1nC @ 4.5V | 2.8ns | 20V | 2.4 ns | 2.1A | 12V | 0.07Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 24 pF | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FMM110-015X2F | IXYS | 数据表 | 32363 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | i4-Pac™-5 | 5 | SILICON | 2 | -55°C~175°C TJ | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | e1 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 锡银铜 | UL RECOGNIZED, AVALANCHE RATED | 180W | SINGLE | 未说明 | 未说明 | FMM | 5 | 不合格 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 180W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 55A, 10V | 4.5V @ 250μA | 8600pF @ 25V | 150nC @ 10V | 150V | 53A | 0.02Ohm | 300A | 800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | DMP58D0SV-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 8Ohm | Matte Tin (Sn) | HIGH RELIABILITY | 400mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 400mW | 2 P-Channel (Dual) | SWITCHING | 8 Ω @ 100mA, 5V | 2.1V @ 250μA | 27pF @ 25V | 50V | 160mA | 20V | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
FDMS0348 | ON Semiconductor | 数据表 | 10200 In Stock |
- | 最小起订量: 1 最小包装量: 1 | Obsolete | 不适用 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTJD4105CT4G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 630mA 775mA | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 8541.21.00.95 | 270mW | 鸥翼 | 260 | unknown | 630mA | 40 | NTJD4105C | 6 | 不合格 | Dual | 增强型MOSFET | 270mW | N and P-Channel | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 23ns | 20V 8V | N-CHANNEL AND P-CHANNEL | 36 ns | 775mA | 8V | 1.1A | 0.375Ohm | -8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||
SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 36 ns | 150°C TJ | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 140mW | SSM6N37 | 2 | Dual | 18 ns | 2 N-Channel (Dual) | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 12pF @ 10V | 20V | 250mA | 1V | 20V | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA1764G-E2-AZ | Renesas Electronics America | 数据表 | 3930 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 150°C TJ | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | EAR99 | 2W | 未说明 | 未说明 | 8 | 2W | 2 N-Channel (Dual) | 35m Ω @ 3.5A, 10V | 1300pF @ 10V | 29nC @ 10V | 60V | 7A | 7A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8J4TB | ROHM Semiconductor | 数据表 | 563250 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2003 | e2 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铜 | -30V | 2W | 鸥翼 | 260 | -2A | 10 | *J4 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 P-Channel (Dual) | SWITCHING | 235m Ω @ 2A, 10V | 2.5V @ 1mA | 190pF @ 10V | 2.4nC @ 5V | 10ns | 30V | 2A | 2A | 0.235Ohm | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
FW906-TL-E | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8A 6A | 150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 2.5W | N and P-Channel | 24m Ω @ 8A, 10V | 690pF @ 10V | 12nC @ 10V | 30V | 6A | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN1029UFDB-13 | Diodes Incorporated | 数据表 | 20000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.4W | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 914pF @ 6V | 19.6nC @ 8V | 12V | 5.6A | 0.029Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSO4804T | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SO | 8A | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | OptiMOS™ | Obsolete | 1 (Unlimited) | 30V | 2W | 8A | BSO4804 | 2W | 2 N-Channel (Dual) | 20mOhm @ 8A, 10V | 2V @ 30μA | 870pF @ 25V | 17nC @ 5V | 27ns | 30V | 8A | 870pF | 逻辑电平门 | 20 mΩ | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8M9FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOP | 9A 5A | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | 2W | *M9 | 2W | N and P-Channel | 18mOhm @ 9A, 10V | 2.5V @ 1mA | 1190pF @ 10V | 21nC @ 5V | 30V | 5A | 1.19nF | 逻辑电平门 | 18 mΩ | ROHS3 Compliant |
SSM6L35FE,LM
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
2.395436
ALD110900PAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
51.497709
DMC25D1UVT-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
1.323295
AON7812
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5483NLT3G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
CMXDM7002A TR PBFREE
Central Semiconductor Corp
分类:Transistors - FETs, MOSFETs - Arrays
ALD110914PAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
32.160206
STS3DNE60L
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
UP0187B00L
Panasonic Electronic Components
分类:Transistors - FETs, MOSFETs - Arrays
VEC2415-TL-W-Z
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
1.485132
DMNH4026SSDQ-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
8.898722
BSL306NL6327HTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BSL314PEL6327HTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BSL207NL6327HTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FMM110-015X2F
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
DMP58D0SV-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.757861
FDMS0348
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
3.086361
NTJD4105CT4G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
UPA1764G-E2-AZ
Renesas Electronics America
分类:Transistors - FETs, MOSFETs - Arrays
SP8J4TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FW906-TL-E
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN1029UFDB-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
1.271647
BSO4804T
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
SP8M9FU6TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
